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反射式激光芯片

反射模式微芯片

品牌：   BATOP

型号：   MC-1064-100ps


反射模式微芯片

品牌：   BATOP

型号：   MC-1064-100ps

 BATOP GmbH成立于2003年，是一家隶属于德国耶拿大学的私人创新型公司。BATOP从事的专业领域包括：低温分子束外延技术，介质溅射镀膜，晶圆加工和芯片安装技术。在过去几年里， BATOP 已成为一个用于被动锁模激光器的可饱和吸收体的世界领先的供应商。可饱和吸收产品集合了各式各样的不同的器件，从可饱和吸收镜(SAM™)，到可饱和输出镜(SOC)和用于透过应用的可饱和吸收体(SA)。迄今为止，可饱和吸收产品已经覆盖了800nm到2.6µm的常用激光波长范围。另一个产品系列是用于太赫兹发射和探测的太赫兹光电导天线(PCA)。BATOP不仅提供单带隙天线，还包括整合了微透镜的高能大狭缝交叉天线阵列和整套的太赫兹光谱仪。 太赫兹光电导天线的激发波长为800nm到1550nm之间。BATOP借助强大的研发能力来不断提高自己的产品， 我们始终和客户在一起，好的满足他们的需求。

产品介绍

MC – 反射模式微芯片(Microchip in reflection mode)

Microchip in reflection mode

  • Nd:YVO4 laser crystal is bonded with a saturable absorber mirror (SAM).
  • The laser output beam is in the reverse direction of the pump beam and must be separated from pump light by using a dichroitic mirror.
  • The laser output is linear polarized with the polarization direction perpendicular to the groove in the copper heat sink.

Part No.

Delivery time

Description

MC-1064-100ps

1 week

Microchip in reflection mode
λ = 1064 nm, pulse duration ~ 100 ps,
pulse energy ~ 20 nJ, repetition rate 80 kHz - 700 kHz
pump wavelength 808 nm

微芯片参数：

MC-1064-100ps
Optical Pump Parameters
Parameter at T=25°C Min. Typ. Max.
Wavelength 806nm 808nm 810nm
Pump Power 70 150mW-200mW 300mW
Pump Spot Diameter 25µm 40µm 60µm
Fluorescent Lifetime 　 35 µs (3%) 　
Pump Absorption @ 808nm 85% 90% 95%
Pump Power Density 5 kW/cm2 　 24 kW/cm2 *
Lasing performance with 40μm pump spot size at 25°C
Parameter at T=25°C Min. Typ. Max.
Laser Wavelength 1064.0nm 1064.3nm 1064.6nm
Laser Wavelength Drift 　 50 pm/100mW** 　
Beam Waist Diameter 60 µm 　 100 µm
M2 1.1 1.3 1.5
Pulse Energy 15 nJ 18 nJ 21 nJ
Pulse Duration 70ps 100ps 130ps
Differential Efficiency 8% 10% 13%
Laseing Thresold 100 mW 110 mW 120 mW
Polarization Extinction Ratio 　 100 　
frep 75 kHz 　 700 kHz
Pav (150mW) 3,0 mW 4,0 mW 5,0 mW
Pav (200mW) 7,5 mW 9,0 mW 10,5 mW
The average output power P and the repetition frequency fR are a function of the optical pump power.These dependencies are nearly linear above the laser threshold. The jitter of the repetition frequencydecreases with increasing pump power to about 2 %, whereas the pulse energy EP remains constant
Dependency of the average output power P on the pump power at 808 nm
Dependency of the repetition rate frep on the pump power at 808 nm
Pulse duration tP
Pulse spectrum
Dependency of the relative frequency jitter on the repetition rate fR
3.

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