传输模式微芯片

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BATOP激光芯片1064nm(Microchip)

品牌： BATOP

型号： MCT-1064-90ps

产品简介
技术文档

BATOP激光芯片1064nm(Microchip)

品牌： BATOP

型号： MCT-1064-90ps

BATOP激光芯片1064nm(Microchip)

品牌： BATOP

型号： MCT-1064-90ps

BATOP GmbH成立于2003年，是一家隶属于德国耶拿大学的私人创新型公司。BATOP从事的专业领域包括：低温分子束外延技术，介质溅射镀膜，晶圆加工和芯片安装技术。在过去几年里， BATOP 已成为一个用于被动锁模激光器的可饱和吸收体的世界领先的供应商。可饱和吸收产品集合了各式各样的不同的器件，从可饱和吸收镜(SAM™)，到可饱和输出镜(SOC)和用于透过应用的可饱和吸收体(SA)。迄今为止，可饱和吸收产品已经覆盖了800nm到2.6µm的常用激光波长范围。另一个产品系列是用于太赫兹发射和探测的太赫兹光电导天线(PCA)。BATOP不仅提供单带隙天线，还包括整合了微透镜的高能大狭缝交叉天线阵列和整套的太赫兹光谱仪。太赫兹光电导天线的激发波长为800nm到1550nm之间。BATOP借助强大的研发能力来不断提高自己的产品，我们始终和客户在一起，好的满足他们的需求。

产品介绍

Microchip激光芯片1064nm

The Microchip (MC) consists of a saturable absorber bonded with a Nd:YVO₄ laser crystal. It can be used to generate pulsed laser radiation at 1064 nm wavelength if pumped with a diode laser at 808 nm using passively Q-switching.

The main advantage of a laser build with a microchip is the pump power dependent repetition rate with fixed pulse duration and pulse energy. By simply increasing the pump power at 808 nm the repetition rate - and consequently the average output power - will be increased proportionally starting from the laser threshold. The laser output is linear polarized.

MC - Microchip in reflection mode
MCT - Microchip in transmission mode

应用领域

微加工
光探测和测距（激光雷达）
精密测量
频率转换

MCT – 传输模式微芯片

The Nd:YVO₄ laser crystal is bonded with a saturable output coupler (SOC).
The laser output beam is in the same direction as the pump beam.
The laser output is linear polarized.

Part No.	Delivery time	Description
MCT-1064-90ps	1 week	Microchip in transmission mode λ = 1064 nm, pulse duration ~ 90 ps, pulse energy ~ 100 nJ, repetition rate 20 kHz - 400 kHz pump wavelength 808 nm
MCT-1064-220ps	1 week	Microchip in transmission mode λ = 1064 nm, pulse duration ~ 220 ps, pulse energy ~ 160 nJ, repetition rate 20 kHz - 400 kHz pump wavelength 808 nm

MCT-1064-90ps

Optical Pump Parameters

Parameter at T=25°C	Min.	Typ.	Max.
Wavelength	806 nm	808 nm	810 nm
Optical Pump Power Pp	70 mW	150 mW-200 mW	300 mW
Pump Spot Diameter	25 µm	40 µm	100 µm
Fluorescent Lifetime		35 µs (3%)
Pump Absorption @ 808nm	85%	90%	97,5%
Pump Power Density	5.5 KW/cm2		24 KW/cm2*

Lasing performance with 40μm pump spot size at 25°C

Parameter at T=25°C	Min.	Typ.	Max.
Laser Emission Wavelength	1064.0nm	1064.3nm	1064.6nm
Laser Wavelength Drift		45 pm/100mW**
Beam Waist Diameter	40 µm		100 µm
M2	1.1	1.3	1.5
Pulse Energy	75 nJ	90 nJ	105 nJ
Pulse Duration	80 ps	90 ps	110 ps
Differential Efficiency	10%	20%	25%
Lasing Threshold	70 mW	90 mW	110 mW
Polarization Extinction Ratio		30
frep	20 kHz		400 kHz
Pp (150mW)	10 mW	12 mW	14 mW
Pp (200mW)	17 mW	20 mW	23 mW