UPD超快光电探测器

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UPD超快光电探测器(Ultrafast_Photodetectors)

品牌：ALPHLAS UPD

产品简介
技术文档

UPD超快光电探测器(Ultrafast_Photodetectors)

品牌：ALPHLAS UPD

产品简介： ALPHLAS UPD系列自由空间入射超快光电探测器系列适合用于从直流到25GHz的空间光波形的测量。可提供检测短为15ps上升时间的光脉冲信号，覆盖从170至2600nm的光谱范围。所有探测器都由紧凑坚实的过氧极化铝外壳封装，供电方式可以采用电池或外接电源。是唯一可提供从170到1100 nm扩展到紫外光谱范围高速硅探测器商业产品。另一种类型独特的紫外线敏感的InGaAs 探测器，可用于检测从350到1700纳米范围内的激光脉冲，因此具有宽的光谱范围和高的响应速度。完美的阻抗匹配和先进的微波技术，确保测量的脉冲波形的保真度。用户可以自由使用50Ω的匹配电阻，进行高响应速度的检测。或为获得大的信号响应曲线，加入高阻抗负载。保证了UPD产品为不同的应用提供大的灵活性。结合BBA系列宽带高增益放大器，高速光探测器对于取代昂贵和繁琐的雪崩光电二极管是一个极好的选择。UPD的系列高速光电探测器是激光和光子学研究的不可缺少的工具。

产品细节图片：

UPD超快光电探测器

特点：

l 超高速运行

l 上升时间：15 ps - 500ps

l 带宽：高达25 GHz

l 光谱范围：170 - 2600纳米

l 紧凑封装

l 电池或外部电源

l 自由空间光入射或FC/PC型

l 接头或光纤尾纤

应用：

l 脉冲形式测量

l 脉冲宽度测量

l 精确的同步

l 模式变化监控

l 外差测量

UPD系列：

Photodetector Model	Rise Time(ps)	Band-width(GHz)	Spectral Range(nm)	Quantum Efficiency@ Peak	SensitiveArea (Dia. µm/mm2)	Noise Equiv. Power (W/√Hz)	DarkCurrent (nA)	Material	Optical Input / Window Type ¹⁾	RF Output Connec-tor


UPD-15-IR2-FC	< 15	> 25	800 - 1700	75%	Fiber, 9 µm	1.0 × 10^-15	0.1	InGaAs	Fiber w. FC/APC ⁵⁾	SMA
UPD-30-VSG-P	< 30	> 10	320 - 900	40%	200x200/0.04	3.0 × 10^-15	0.1	GaAs	Polished, glass	SMA
UPD-35-IR2-P	< 35	> 10	800 - 1700	80%	55/0.0024	1.0 × 10^-15	0.3	InGaAs	Polished, glass	SMA
UPD-35-IR2-D	< 35	> 10	800 - 1700	80%	55/0.0024	1.0 × 10^-15	0.3	InGaAs	Diffuse, quartz	SMA
UPD-35-IR2-FR	< 35	> 10	800 - 1700	80%	55/0.0024	1.0 × 10^-15	0.3	InGaAs	FC/PC receptacle⁵⁾	SMA
UPD-35-IR2-FC	< 35	> 10	800 - 1700	80%	Fiber, 9 µm	1.0 × 10^-15	0.3	InGaAs	Fiber w. FC/APC ⁵⁾	SMA
UPD-35-UVIR-P	< 35	> 10	350 - 1700	80%	55/0.0024	1.0 × 10^-15	0.3	InGaAs⁴⁾	Polished, MgF₂	SMA
UPD-35-UVIR-D	< 35	> 10	350 - 1700	80%	55/0.0024	1.0 × 10^-15	0.3	InGaAs⁴⁾	Diffuse, quartz	SMA
UPD-40-VSI-P	< 40	> 8.5	500 - 1690	40%	200x200/0.04	3.0 × 10^-10	5000	InGaAs	Polished, glass	SMA
UPD-40-IR2-P	< 40	> 8.5	800 - 1700	80%	60/0.0028	1.1 × 10^-15	0.5	InGaAs	Polished, glass	SMA
UPD-40-IR2-D	< 40	> 8.5	800 - 1700	80%	60/0.0028	1.1 × 10^-15	0.5	InGaAs	Diffuse, quartz	SMA
UPD-40-IR2-FR	< 40	> 8.5	800 - 1700	80%	60/0.0028	1.1 × 10^-15	0.5	InGaAs	FC/PC receptacle⁵⁾	SMA
UPD-40-IR2-FC	< 40	> 8.5	800 - 1700	80%	Fiber, 9 µm	1.1 × 10^-15	0.5	InGaAs	Fiber w. FC/APC ⁵⁾	SMA
UPD-40-UVIR-P	< 40	> 8.5	350 - 1700	80%	60/0.0028	1.1 × 10^-15	0.5	InGaAs⁴⁾	Polished, MgF₂	SMA
UPD-40-UVIR-D	< 40	> 8.5	350 - 1700	80%	60/0.0028	1.1 × 10^-15	0.5	InGaAs⁴⁾	Diffuse, quartz	SMA
UPD-50-SP	< 50	> 7.0	320 - 1100	45%	100/0.0079	1.2 × 10^-15	0.001	Si	Polished, glass	SMA
UPD-50-SD	< 50	> 7.0	320 - 1100	45%	100/0.0079	1.2 × 10^-15	0.001	Si	Diffuse, quartz	SMA
UPD-50-UP	< 50	> 7.0	170 - 1100	45%	100/0.0079	1.2 × 10^-15	0.001	Si ⁴⁾	Polished, MgF₂	SMA
UPD-50-UD	< 50	> 7.0	170 - 1100	45%	100/0.0079	1.2 × 10^-15	0.001	Si ⁴⁾	Diffuse, quartz	SMA
UPD-70-IR2-P	< 70	> 5.0	800 - 1700	80%	80/0.005	2.0 × 10^-15	0.8	InGaAs	Polished, glass	SMA
UPD-70-IR2-D	< 70	> 5.0	800 - 1700	80%	80/0.005	2.0 × 10^-15	0.8	InGaAs	Diffuse, quartz	SMA
UPD-70-IR2-FR	< 70	> 5.0	800 - 1700	80%	80/0.005	2.0 × 10^-15	0.8	InGaAs	FC/PC receptacle⁵⁾	SMA
UPD-70-IR2-FC	< 70	> 5.0	800 - 1700	80%	Fiber, 9 µm	2.0 × 10^-15	0.8	InGaAs	Fiber w. FC/APC ⁵⁾	SMA
UPD-70-UVIR-P	< 70	> 5.0	350 - 1700	80%	80/0.005	2.0 × 10^-15	0.8	InGaAs⁴⁾	Polished, MgF₂	SMA
UPD-70-UVIR-D	< 70	> 5.0	350 - 1700	80%	80/0.005	2.0 × 10^-15	0.8	InGaAs⁴⁾	Diffuse, quartz	SMA
UPD-100-IR1-P	< 100	> 3.0	400 - 2000	80%	80/0.005	3.0 × 10^-13	700	Ge	Polished, glass	SMA
UPD-200-SP	< 175	> 2.0	320 - 1100	85%	400/0.126	1.5 × 10^-15	0.001	Si	Polished, glass	BNC
UPD-200-SD	< 175	> 2.0	320 - 1100	85%	400/0.126	1.5 × 10^-15	0.001	Si	Diffuse, quartz	BNC
UPD-200-UP	< 175	> 2.0	170 - 1100	85%	400/0.126	1.5 × 10^-15	0.001	Si ⁴⁾	Polished, MgF₂	BNC
UPD-200-UD	< 175	> 2.0	170 - 1100	85%	400/0.126	1.5 × 10^-15	0.001	Si ⁴⁾	Diffuse, quartz	BNC
UPD-300-SP	< 300	> 1.0	320 - 1100	90%	600/0.283	3.0 × 10^-15	0.01	Si	Polished, glass	BNC
UPD-300-SD	< 300	> 1.0	320 - 1100	90%	600/0.283	3.0 × 10^-15	0.01	Si	Diffuse, quartz	BNC
UPD-300-UP	< 300	> 1.0	170 - 1100	90%	600/0.283	3.0 × 10^-15	0.01	Si ⁴⁾	Polished, MgF₂	BNC
UPD-300-UD	< 300	> 1.0	170 - 1100	90%	600/0.283	3.0 × 10^-15	0.01	Si ⁴⁾	Diffuse, quartz	BNC
UPD-500-SP	< 500	> 0.6	320 - 1100	90%	800/0.5	3.5 × 10^-15	0.01	Si	Polished, glass	BNC
UPD-500-SD	< 500	> 0.6	320 - 1100	90%	800/0.5	3.5 × 10^-15	0.01	Si	Diffuse, quartz	BNC
UPD-500-UP	< 500	> 0.6	170 - 1100	90%	800/0.5	3.5 × 10^-15	0.01	Si ⁴⁾	Polished, MgF₂	BNC
UPD-500-UD	< 500	> 0.6	170 - 1100	90%	800/0.5	3.5 × 10^-15	0.01	Si ⁴⁾	Diffuse, quartz	BNC
UPD-3N-IR2-P	< 150⁶⁾	> 0.4⁶⁾	800 - 2100	75%	300/0.07	1.5 × 10^-13	90	InGaAs	Polished, glass	BNC
UPD-5N-IR2-P	< 200⁶⁾	> 0.3⁶⁾	800 - 2600	70%	300/0.07	7.0 × 10^-13	2000	InGaAs	Polished, glass	BNC
UPD-2M-IR2-P	< 75000	> 0.004	900 - 1700	80%	2000/3.14	4.0 × 10^-14	5	InGaAs	Polished, glass	BNC
UPD-2M-IR2-P-1TEC ³⁾	< 75000	> 0.004	900 - 1700	75%	2000/3.14	1.0 × 10^-14	0.3	InGaAs	Polished, glass	BNC

MSM超快光电探测器UltraFast

产品简介：UltraFast系列MSM超快光电探测器，探测带宽可达35GHz，探测波长范围400~1600nm。经过优化设计，探测器脉冲拖尾降至低，并可无震荡脉冲响应工作。所采用的MSM结构（金属－半导体－金属）具有电容低、串联阻抗低和感应面积大等内在优点，这些优点使得探测器具有优良的性能。特殊的结构和掺杂，提高了探测器的响应度，降低了电噪声。MSM探测器是测定高速光源和光波系统的时频特性的理想选择。

两种型号：

UltraFast-20 (Bandwidth DC – 20 GHz)

UltraFast-35 (Bandwidth DC – 35 GHz)

技术参数：

	UltraFast-20-xx	UltraFast-35-xx
探测器类型	MSM (Metal – Semiconductor – Metal)
感应材料	InGaAs
带宽 (-3 dB)	DC – 20 GHz	DC – 35 GHz
上升时间 (10% - 90%)	< 12 ps	< 11 ps
脉宽 (FWHM)	< 20 ps	< 18 ps
波长范围	<400 nm – 1.6 µm
响应度*	0.24 A/W @ 810 nm 0.19 A/W @ 1.3 µm 0.12 A/W @ 1.5 µm	0.12 A/W @ 810 nm 0.1 A/W @ 1.3 µm 0.06 A/W @ 1.5 µm
偏置电压	2 V – 9 V
偏置输入接口	SMC male
标准射频信号输出口	K-Type female