Saturable Absorber Mirror 1150nm
Saturable Absorber Mirror 1150nm
Saturable Absorber Mirror 1150nm
SAM™ - Saturable Absorber Mirror
Saturable absorber mirrors are Bragg-mirrors with AlAs/GaAs quarter-wave stacks, grown on GaAs wafers with one or more low temperature GaAs (LT-GaAs) or InGaAs films as saturable absorbers.
With our patented semi-resonant design we meet the requirements of different passively mode-locked laser applications in the picosecond and femtosecond region. The saturable absorptance of the fast response films of LT-GaAs can be adjusted with our design in a wide region.
More about SAMs ...
We are open for new ideas of our customers to extend our current portfolio of saturable absorber mirrors with respect to certain parameters like wavelength, low intensity absorption or relaxation time.
SAM product list
Wavelength region 790 nm-830 nm: 800 nm
Wavelength region 910 nm-990 nm: 940 nm | 980 nm
Wavelength region 1020 nm-1150 nm: 1040 nm | 1064 nm | 1100 nm
Wavelength region 1110 nm-1320 nm: 1150 nm | 1300 nm
Wavelength region 1320 nm-1460 nm: 1340 nm | 1420 nm
Wavelength region 1470 nm-1660 nm: 1510 nm | 1550 nm | 1645 nm
Wavelength region 1900 nm-3200 nm: 2000 nm | 2150 nm | 2400 nm | 3000 nm
SAM 1150 |
|
laser wavelength |
λ = 1150 nm |
high reflection band (R>99%) |
λ = 1110-1200 nm |
absorption |
A0 = 3 - 6 % |
relaxation time |
τ ~ 500 fs |
Part No. |
Delivery time |
Description |
SAM-1150-3-500fs-x |
1 week |
SAM: λ = 1150 nm, absorptance 3 %, |
SAM-1150-4-500fs-x |
1 week |
SAM: λ = 1150 nm, absorptance 4 %, |
SAM-1150-6-500fs-x |
1 week |
SAM: λ = 1150 nm, absorptance 6 %, |
SAM-1150-28-1ps-x |
1 week |
SAM: λ = 1150 nm, absorptance 28 %, |
SAM-1150-32-1ps-x |
1 week |
SAM: λ = 1150 nm, absorptance 32 %, |