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Non resist coating

Non resist coating

PC3 Coatings
Coating
PC3-700
PC3-1500
PC3-6000
Thickness
0.6µm - 1.6µm
1.1µm - 3.2µm
5.0µm - 12.2µm

 

  • Applications
    • Planarizing Layer
      • for use in etchback processes to transfer planar topology into an underlying dielectric
    • Mechanical Protective Coating
      • for use in protecting vital components during sawing and dicing operations
    • Temporary Gluing Layer
      • easily removable temporary adhesive layer for use in temporary bonding, back grinding or backside processing applications
  • Properties
    • Superb planarizing capability
    • Compatible with resist coaters
  • Impact on productivity
    • Elimination of Chemical Mechanical Polishing (CMP) in some applicatios
    • Suppression of microloading effects in etchback process
    • Elimination of film peeling and cracking during dicing operations
    • Easy removal in Resist Developer RD3 or RD6 after back grinding and wafer separation

Spin-On Glass Coatings

Spin-On glass
Coating
IC1-200
DC4-500
Thickness
0.17µm - 0.50µm
0.45µm - 1.0µm

 

  • Applications
    • Smoothing layer as a part of dielectric in multilevel metal process
    • Protective coating
    • Intermediate coating in trilayer resist process
  • Properties
    • Compatible with spin coating techniques
    • Shelf-life exceeding 3 years at room temperature
    • Good adhesion to polymers
    • Lack of solubility in common solvents after curing at temperatures lower than 100°C
    • Compatible with typical resist coating equipment and no need for SOG coaters
  • Impact on productivity
    • Elimination of CVD SiO2 in some applications
    • Elimination of time consuming deposition and etchback of SiO2 to fill narrow tranches in multilevel metal process
    • Elimination of polishing in preparation of substrates for thin film magnetic head fabrication

Spin-On Dopants

 

Spin-On Dopant Coatings
Coating
BDC1-2000
PDC1-2000
ZDPC2-2000
Type
Boron Dopant Coating
Phosphorus Dopant Coating
Zinc Dopant Coating

 

  • Applications
    • Spin-on boron source [a-Si, c-Si applications]
    • Spin-on phosphorus source [a-Si, c-Si applications]
    • Spin-on zinc source [III/V substrates]
  • Properties
    • Transparent film converted to solid-state dopant upon application of oxygen plasma
  • Impact on productivity
    • Elimination of doped spin-on glasses
    • Elimination of ion implantation in some applications
    • Elimination of zinc doping from ampoule

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