Negative Photoresists

Negative Photoresists Developable in a Basic Water Developer:
Negative Etch Resists
Thickness Range:	0.5 - 200 micrometers
Performance:	No HMDS or adhesion promoters necessary Superior resolution capability. Short exposure time. Short development time. Superior temperature resistance of up to 180 degrees Celsius. Superior selectivity in RIE process. Easy resist removal in Resist Remover RR41. Shelf life exceeding 3 years in storage at room temperature.
Applications:	High-selectivity reactive ion etching. Process steps where high temperature resistance is required, e.g. ion implantation.

Thick Resists
Thickness Range:	8 - 200 micrometers
Performance:	Superior resolution capability. Short bake time. High photo speed which translates into high exposure throughput. Short development time. Superior adhesion. Easy resist removal in Resist Remover RR41. Shelf life exceeding 3 years in storage at room temperature.
Applications:	Metal plating for the fabrication of: bumps for flip-chip packaging mutli-chip modules MEMS sensors thin-film magnetic heads deep trench planarization

Resists with Sidewall Undercut for Lift-off Process
Thickness Range:	0.5 - 40 micrometers
Performance:	Superior resolution capability. Short bake time. Easy adjustment of the degree of resist undercut as a function of exposure energy. Short development time. Superior temperature resistance of up to 200 degrees Celsius. Superior selectivity in RIE process. Easy resist removal in Resist Remover RR41. Shelf life exceeding 3 years in storage at room temperature.
Applications:	Lift-off process in fabrication of: laser diodes GaAs integrated circuits ferro- electric RAMs flat-panel displays MEMS sensors biochips

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