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Negative Photoresists

Negative Photoresists

Negative Photoresists

 

 

 

Negative Photoresists Developable in a Basic Water Developer:
Negative Etch Resists
Thickness Range: 0.5 - 200 micrometers
Performance:
  • No HMDS or adhesion promoters necessary
  • Superior resolution capability.
  • Short exposure time.
  • Short development time.
  • Superior temperature resistance of up to 180 degrees Celsius.
  • Superior selectivity in RIE process.
  • Easy resist removal in Resist Remover RR41.
  • Shelf life exceeding 3 years in storage at room temperature.
Applications:
  • High-selectivity reactive ion etching.
  • Process steps where high temperature resistance is required, e.g. ion implantation.
Thick Resists
Thickness Range: 8 - 200 micrometers
Performance:
  • Superior resolution capability.
  • Short bake time.
  • High photo speed which translates into high exposure throughput.
  • Short development time.
  • Superior adhesion.
  • Easy resist removal in Resist Remover RR41.
  • Shelf life exceeding 3 years in storage at room temperature.
Applications:
  • Metal plating for the fabrication of:
    • bumps for flip-chip packaging
    • mutli-chip modules
    • MEMS
    • sensors
    • thin-film magnetic heads
  • deep trench planarization
Resists with Sidewall Undercut for Lift-off Process
Thickness Range: 0.5 - 40 micrometers
Performance:
  • Superior resolution capability.
  • Short bake time.
  • Easy adjustment of the degree of resist undercut as a function of exposure energy.
  • Short development time.
  • Superior temperature resistance of up to 200 degrees Celsius.
  • Superior selectivity in RIE process.
  • Easy resist removal in Resist Remover RR41.
  • Shelf life exceeding 3 years in storage at room temperature.
Applications:
  • Lift-off process in fabrication of:
    • laser diodes
    • GaAs integrated circuits
    • ferro- electric RAMs
    • flat-panel displays
    • MEMS
    • sensors
    • biochips

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